Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same

ABSTRACT

Transistor devices having a self-aligned gate structure on transparent substrates and techniques for fabrication thereof are provided. In one aspect, a method of fabricating a transistor device includes the following steps. A channel material is formed on a transparent substrate. Source and drain electrodes are formed in contact with the channel material. A dielectric layer is deposited on the channel material. A photoresist is deposited on the dielectric layer and developed using UV light exposure through the transparent substrate. A gate metal(s) is deposited on the exposed portions of the dielectric layer and the undeveloped portions of the photoresist. The undeveloped portions of the photoresist are removed along with portions of the gate metal over the source and drain regions to form a gate of the device on the dielectric layer over the channel material which is self-aligned to the source and drain electrodes.

STATEMENT OF GOVERNMENT RIGHTS

This invention was made with Government support under Contract numberFA8650-08-C-7838 awarded by (DARPA) Defense Advanced Research ProjectsAgency. The Government has certain rights in this invention.

FIELD OF THE INVENTION

The present invention relates to transistor devices and moreparticularly, to transistor devices having a self-aligned gate structureon transparent substrates and techniques for fabrication thereof.

BACKGROUND OF THE INVENTION

Transistors used for integrated circuits require minimal parasiticcapacitance to maximize the circuit speed and frequency. Each transistortypically includes a source region and a drain region interconnected bya channel and a gate that regulates electron flow through the channel.To minimize parasitic capacitance, traditional silicon metal-oxidesemiconductor field effect transistors (MOSFETs) can employ self-alignedgate structures. Specifically, with these structures, the gate is selfaligned to the channel and to the source and drain regions. Accordingly,with this configuration, the amount by which the gate overlaps thesource and drain regions is at best minimal. By minimizing oreliminating the overlap between the gate and the source and drainregions, the parasitic capacitance between the gate and the source/drainis reduced.

There is currently much interest in the use of carbon-based materials,such as graphene and carbon nanotubes, as a transistor channel material.One challenge for implementation of such carbon-based devices, however,is that there currently exists no practical method to fabricate aself-aligned gate structure with these devices. Therefore, unliketraditional silicon MOSFETs, parasitic capacitance in carbon-baseddevices is still a concern.

Therefore, techniques for producing carbon-based transistor devices withself-aligned gate structure would be desirable.

SUMMARY OF THE INVENTION

The present invention provides transistor devices having a self-alignedgate structure on transparent substrates and techniques for fabricationthereof. In one aspect of the invention, a method of fabricating atransistor device is provided. The method includes the following steps.A transparent substrate is provided. A channel material is formed on thesubstrate. Source and drain electrodes are formed in contact with thechannel material. A dielectric layer is deposited on the channelmaterial and on the source and drain electrodes. A photoresist isdeposited on the dielectric layer. The photoresist is developed using UVlight exposure through the transparent substrate, wherein exposure ofportions of the photoresist is blocked by the source and drainelectrodes. Developed portions of the photoresist are removed exposingportions of the dielectric layer, wherein undeveloped portions of thephotoresist remain over the source and drain electrodes. At least onegate metal is deposited on the exposed portions of the dielectric layerand the undeveloped portions of the photoresist. The undevelopedportions of the photoresist are removed along with portions of the gatemetal over the source and drain regions, wherein a remaining portion ofthe gate metal between the source and drain region electrodes forms agate of the device on the dielectric layer over the channel materialwhich is self-aligned to the source and drain electrodes.

In another aspect of the invention, another method of fabricating atransistor device is provided. The method includes the following steps.A transparent substrate is provided. A channel material is formed on thesubstrate. Source and drain electrodes are formed in contact with thechannel material. A photoresist is deposited on the channel material andon the source and drain electrodes. The photoresist is developed usingUV light exposure through the transparent substrate, wherein exposure ofportions of the photoresist is blocked by the source and drainelectrodes. Developed portions of the photoresist are removed exposingportions of the channel material, wherein undeveloped portions of thephotoresist remain over the source and drain electrodes. A dielectriclayer is deposited on the channel material and on the undevelopedportions of the photoresist. At least one gate metal is deposited on thedielectric layer. The undeveloped portions of the photoresist areremoved along with portions of the gate metal and portions of thedielectric layer over the source and drain regions, wherein a remainingportion of the gate metal between the source and drain region electrodesforms a gate of the device on the dielectric layer over the channelmaterial which is self-aligned to the source and drain electrodes.

In yet another aspect of the invention, a transistor device is provided.The transistor device includes a transparent substrate; a channelmaterial on the substrate; source and drain electrodes in contact withthe channel material; a dielectric layer on the channel material and onthe source and drain electrodes; and a gate on the dielectric layer overthe channel material which is self-aligned to the source and drainelectrodes.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top-down diagram illustrating a channel material, such as acarbon-based material or a nanostructured material, on a transparentsubstrate according to an embodiment of the present invention;

FIG. 2 is a top-down diagram illustrating the channel material havingpatterned into an active area on the transparent substrate according toan embodiment of the present invention;

FIG. 3 is a cross-sectional diagram illustrating source and drainelectrodes having been formed that are in contact with the channelmaterial according to an embodiment of the present invention;

FIG. 4 is a cross-sectional diagram illustrating a dielectric layerhaving been deposited onto exposed top surfaces of the channel material,the transparent substrate and the source and drains electrodes accordingto an embodiment of the present invention;

FIG. 5 is a cross-sectional diagram illustrating a positive photoresisthaving been deposited over the dielectric layer and development of thephotoresist using UV light exposure through the transparent substrateaccording to an embodiment of the present invention;

FIG. 6 is a cross-sectional diagram illustrating portions of thephotoresist that remain over the source and drain electrodes once thedeveloped portions of the photoresist have been removed according to anembodiment of the present invention;

FIG. 7 is a cross-sectional diagram illustrating a gate metal(s) havingbeen blanket deposited onto exposed portions of the dielectric layer andon the remaining portions of the photoresist according to an embodimentof the present invention;

FIG. 8 is a cross-sectional diagram illustrating a lift-off processhaving been used to remove portions of the gate metal from over thesource and drain electrodes, thus forming a gate according to anembodiment of the present invention;

FIG. 9 is a cross-sectional diagram illustrating an optional step toremove excess gate metal according to an embodiment of the presentinvention;

FIG. 10 is a cross-sectional diagram illustrating a positive photoresisthaving been deposited over the channel material/the source and drainselectrodes and development of the photoresist using UV light exposurethrough the transparent substrate according to an embodiment of thepresent invention;

FIG. 11 is a cross-sectional diagram illustrating portions of thephotoresist that remain over the source and drain electrodes once thedeveloped portions of the photoresist have been removed according to anembodiment of the present invention;

FIG. 12 is a cross-sectional diagram illustrating a dielectric layerhaving been deposited onto exposed surfaces of the channel material, theremaining portions of the photoresist, the transparent substrate and thesource and drains electrodes according to an embodiment of the presentinvention;

FIG. 13 is a cross-sectional diagram illustrating a gate metal(s) havingbeen blanket deposited onto the dielectric layer according to anembodiment of the present invention;

FIG. 14 is a cross-sectional diagram illustrating a lift-off processhaving been used to remove portions of the gate metal and the dielectriclayer from over the source and drain electrodes, thus forming a gateaccording to an embodiment of the present invention; and

FIG. 15 is a cross-sectional diagram illustrating an optional step toremove excess gate metal according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Provided herein are transistor devices with a self-aligned gatestructure fabricated on transparent substrates. FIGS. 1-9 illustrate anexemplary methodology for fabricating such devices.

FIG. 1 is a top-down diagram illustrating a channel material 102 havingbeen formed on a transparent substrate. In the depiction of FIG. 1, thetransparent substrate is obscured by the channel material and thus isnot visible. However, the transparent substrate is shown in illustratedin subsequent figures.

According to an exemplary embodiment, the channel material is made up ofone of a carbon-based material, such as graphene or carbon nanotubes.Graphene is a one atom thick sheet of carbon atoms that are arranged ina honeycomb crystal lattice structure. See, for example, FIGS. 1 and 2.While FIGS. 1 and 2 illustrate graphene as the channel material, ashighlighted above, graphene is only one of a number of differentexemplary channel materials that may be used in accordance with thepresent techniques.

By way of example only, when the channel material is formed fromgraphene, the graphene can be produced/provided in a number of differentways. In one exemplary embodiment, the graphene is first grown on acatalytic metal surface (e.g., on a copper (Cu) or nickel (Ni) film (notshown)) by a chemical vapor deposition (CVD) process. The Cu or Ni filmacts as a catalyst for carbon precursor decomposition. An exemplaryprocess for CVD growth of grapheme on a Cu film and for transferring thegraphene to a substrate is described, for example, in Liu et al.,“Large-Scale Graphene Transistors with Enhanced Performance andReliability Based on Interface Engineering by PhenylsilaneSelf-Assembled Monolayers,” Nano Lett. 2011, 11, 523-528 (hereinafter“Liu”), the contents of which are incorporated by reference herein.

By way of example only, it is described in Liu that a piece of Cu foil(25 micrometer (μm) thick, Sigma-Aldrich) was placed in a 1 inchdiameter quartz furnace tube at low pressure (60 milliTorr (mTorr)).Prior to processing, the system was flushed with 6 sccm of forming gas(5% H₂ in Ar) for two hours at a pressure of around 500 mTorr to removeany residual oxygen and water present in the system. The Cu foil wasthen heated to 875° C. in forming gas (6 sccm, 500 mTorr) and kept atthis temperature for 30 minutes to reduce native CuO and increase the Cugrain size. After reduction, the Cu foil was exposed to ethylene (6sccm, 500 mTorr) at 875° C. for 30 minutes. The result was the formationof a graphene layer on the Cu foil. The sample was cooled down informing gas (6 sccm, 500 mTorr). PMMA was spin-coated on top of thegraphene layer formed on the Cu foil, and the Cu foil was then dissolvedin 1 M iron chloride. The remaining graphene/PMMA layer was thoroughlywashed with DI water and transferred to the target substrates.Subsequently, the PMMA was dissolved in hot acetone (80° C.) for onehour. The substrates with graphene were rinsed in methanol and dried ina stream of nitrogen.

Alternatively, when the transparent substrate is a silicon carbide (SiC)wafer, then the graphene can be epitaxially grown directly on thesubstrate using an evaporation process. By way of example only, thisprocess involves heating the SiC wafer (for example, to a temperature offrom about 1,150° C. to about 1,450° C.) which causes the silicon atomson the surface of the SiC wafer to evaporate, leaving behind acarbon-rich surface arranged in one or more graphene layers. See, forexample, U.S. Patent Application Publication No. 2010/0065988 A1 filedby Hannon et al., entitled “Method for Preparation of Flat Step-FreeSilicon Carbide Surfaces,” the contents of which are incorporated byreference herein.

When the channel material is formed from carbon nanotubes, the carbonnanotubes can be deposited as an array on the surface of the transparentsubstrate from a solution using, for example, a spin-on coating process.The carbon nanotubes can also be grown in a manner similar to the CVDgrowth process described for graphene above. Namely, as is known in theart, to begin the nanotube CVD growth process a substrate having a layerof metal catalyst particles, such as iron, nickel or cobalt particles isprovided. The diameters of the nanotubes that are to be grown arerelated to the size of the metal particles. The substrate is then heatedto a temperature of from about 500° C. to about 800° C. To initiategrowth of the nanotubes, two gases are introduced into the ambient,i.e., a process gas (e.g., ammonia, nitrogen or hydrogen) and acarbon-containing gas (e.g., acetylene, ethylene, ethanol or methane).The nanotubes form at the site of the metal catalyst particles.

Alternatively, according to another exemplary embodiment, the channelmaterial can include a semiconducting nanostructured material such asone or more of nanowires, nanorods, nanocolumns and quantum dots. Ashighlighted above, in addition to carbon-based materials, the channelmaterial may be formed from nanowires. The term “nanowires,” as usedherein refers to any rod-like structures having a diameter of betweenabout five nanometers (nm) and about 200 nm, and a length of betweenabout 0.1 μm and about 100 μm, e.g., between about three μm and about 30μm. According to the present teachings, the nanowires are formed from asemiconductor material, such as silicon, germanium andsilicon-germanium. Nanowire arrays can be formed, for example, using avapor-liquid-solid (VLS)-CVD growth technique. With VLS-CVD, a catalyst(for example, gold film) is deposited on a substrate. Thesubstrate/catalyst is inserted into a CVD system to achieve nanowiregrowth. The environment in which the nanowire growth is carried out canbe tailored to dictate the composition of the nanowires produced. By wayof example only, the use of a silane (SiH₄)-containing ambient willresult in silicon nanowire growth. Further, the addition of n- or p-typedopants into the ambient can result in n-doped or p-doped nanowiregrowth, if desired. For a detailed description of nanowire formation,see, for example, U.S. application Ser. No. 11/494,195, entitled“Techniques for Use of Nanotechnology in Photovoltaics,” filed on Jul.27, 2006, the contents of which are incorporated by reference herein.Nanowire arrays produced in this manner may then be transferred to thetransparent substrate.

Nanorods are a nanostructured material having an aspect ratio of lengthto width of from about 3 to about 5. A nanorod synthesis technique isdescribed, for example, in Han et al., “Synthesis of Gallium NitrideNanorods Through a Carbon Nanotube-Confined Reaction,” Science, vol. 277(August 1997), the contents of which are incorporated by referenceherein. Nanocolumns are described, for example, in Guha et al., “Directsynthesis of single crystalline In₂O₃ nanopyramids and nanocolumns andtheir photoluminescence properties,” Appl. Phy. Lett. 85, 3851 (2004),the contents of which are incorporated by reference herein.

Quantum dots, as known in the art, are semiconductor materials withelectrical characteristics closely related to the size and shape of theindividual crystal. Quantum dots can be assembled into a nanofilm.Quantum dots may be fabricated using an advanced epitaxy process. See,for example, Watanabe et al., “Fabrication of GaAs Quantum Dots byModified Droplet Epitaxy,” Jpn. J. Appl. Phys., vol. 39, pp. L79-L81(2000), the contents of which are incorporated by reference herein.

The channel material 102 is then patterned to form an active area 102 aon the transparent substrate 202. See FIG. 2. As highlighted above, theillustration of graphene as the channel material in FIGS. 1 and 2 isdone merely for exemplary purposes. According to the present techniques,the transparent substrate has to be transparent to ultraviolet (UV)light that will later in the process be used for exposing a photoresistduring patterning steps used in gate formation (see below). Thus, ingeneral, any substrate transparent to UV light may be used inconjunction with the present teachings. By way of example only, ashighlighted above, a SiC substrate (which is inherently transparent)that can be used to directly grow graphene on a surface thereof may beemployed. Other commercially glass or transparent flexible plasticsubstrates may be used. For instance, flexible plastic substrates areavailable from Teijin DuPont Films Limited, e.g., the Teonex®polyethylene naphthalate (PEN) film or polyethylene terephthalate (PET)film.

The channel material may be patterned into active area 102 a by firstpatterning a mask (not shown) over the channel material 102 with thelocation and footprint of active area 102 a. O₂ plasma reactive ionetching (RIE) can then be used to remove portions of the channelmaterial not covered by the mask and outside of the active area. Themask is removed. The particular parameters for performing thispatterning step would be apparent to one of ordinary skill in the artand thus are not described further herein.

Next, source and drains electrodes 302 (labeled “S” and “D,”respectively) are formed in contact with the channel material. See FIG.3. According to an exemplary embodiment, source and drain electrodes 302are formed by first depositing a suitable metal over the transparentsubstrate and channel material, and then patterning the metal usingstandard lithography techniques to form source and drains electrodes302. Suitable metals include, but are not limited to, gold (Au),platinum (Pt) and/or nickel (Ni). Alternatively, a stencil can bepatterned to cover areas of the transparent substrate and channelmaterial in which the source and drain electrodes 302 will not beformed. The given metal(s) (e.g., Au, Pt and/or Ni) can be depositedover the stencil. The stencil can then be removed using standardprocesses, removing the excess metal with it. The result is source anddrains electrodes 302.

As shown in FIG. 4, a dielectric layer 402 is deposited onto thestructure coating the exposed top surfaces of the channel material, thetransparent substrate 202 and the source and drains electrodes 302. Thedielectric layer 402 will serve as a gate dielectric of the device,separating a gate of the transistor (to be formed as described below)from a channel of the transistor. According to an exemplary embodiment,the dielectric layer 402 includes, but is not limited to, one or more ofhafnium oxide (HfO₂), aluminum oxide (Al₂O₃) and silicon oxide (SiO₂)deposited using, e.g., atomic layer deposition (ALD), sputtering orplasma enhanced chemical vapor deposition (PECVD). Dielectric layer 402is preferably a very thin layer so as to maximize the gate capacitanceand enhance the electrostatic control of the transistors. By way ofexample only, dielectric layer 402 is formed having a thickness of fromabout 1 nm to about 50 nm, e.g., about 10 nm.

To begin the gate fabrication process, a positive photoresist 502 isthen blanket deposited over the dielectric layer 402. See FIG. 5.Photoresist 502 may be deposited in this manner using a spin-ondeposition process. Any conventional photoresist material may beemployed. Next, as indicated by arrows 504, unlike with conventionalfabrication techniques, the photoresist 502 is then exposed (using UVlight) through the transparent substrate 202, i.e., from the backside ofthe structure. By contrast, conventional processes would involveexposing the photoresist from the top of the structure, i.e., from anopposite side to what is shown in FIG. 5.

As is known to those of skill in the art, the exposure of positivephotoresist material to UV light will develop those areas of thephotoresist exposed to the UV light. Typical UV lasers used inlithography systems include the Krypton fluoride laser at 248-nmwavelength and the argon fluoride laser at 193-nm wavelength. Theexposure duration depends on the specific photoresist being employed. Atypical exposure duration is from about 5 seconds to about 60 seconds.The “developed” portions of the photoresist can then be easily removedusing a developer solution, e.g., tetramethylammonium hydroxide (TMAH),selective to the unexposed or undeveloped portions of the photoresist.Advantageously, with the present fabrication flow, since the exposure isbeing done from a backside of the structure, through the transparentsubstrate, certain portions of the photoresist 502 are blocked fromexposure to the UV light by the source and drain electrodes 302. Theseportions of the photoresist blocked by the source and drain electrodes302 (these portions are shown as portions 602 in FIG. 6, describedbelow) are self-aligned to an area over the channel material in whichthe gate will be formed. The UV light can penetrate the thin dielectriclayer.

Namely, as shown in FIG. 6, once the developed portions of thephotoresist are removed (as described above), i.e., the photoresist ispatterned, the remaining portions 602 of the photoresist remain over thesource and drain electrodes 302. These portions 602 of the photoresistwill mask the source and drain electrodes 302 during gate metaldeposition and can be used (as described below) to lift-off the excessgate metal.

As shown in FIG. 7, a gate metal(s) 702 is blanket deposited onto theexposed portions of the dielectric layer 402 and on the portions 602 ofthe patterned photoresist. Any suitable gate metal or combination ofmetals may be employed. By way of example only, gate metal 702 mayinclude Au, Cu and/or aluminum (Al) deposited using, e.g., thermalevaporation. According to an exemplary embodiment, gate metal 702 ismade up of a plurality of distinct metal layers deposited as a stack.For instance, a layer of Au (e.g., having a thickness of about 5 nm) maybe deposited, e.g., using thermal evaporation, followed by a layer of Al(e.g., having a thickness of about 40 nm) deposited by the same method.

A lift-off process is then used to remove the portions 602 of thephotoresist and with them portions of the overlying metal layer 702. SeeFIG. 8. According to an exemplary embodiment, the lift-off processinvolves leaving the wafer in a hot acetone at about 80° C. for aduration of from about 30 minutes to about 1 hour or in anN-Methylpyrrolidone (NMP) solution at room temperature for a duration ofabout 1 hour, and then rinsing the wafer with copious acetone/NMP andisopropanol and deionized water. The result is gate 802 (labeled “G”).Advantageously, since the photoresist portions 602 (now removed) werealigned with the source and drain electrodes 302, portions of the gatemetal 702 over the source and drain electrodes 302 were also removed bythe above-described lift-off process. Accordingly, the portion of metallayer 702 that is gate 802 is self-aligned with the source and drainelectrodes 302. See FIG. 8.

As is apparent from the above-described process flow and associatedfigures, the source and drain electrodes 302 of the transistor deviceare interconnected by the channel material (which serves as a channel ofthe transistor device). The gate 802, which is separated from thechannel by the dielectric layer 402, will serve to regulate electronflow through the channel.

Portions 804 of the metal layer 702 will also remain to the outer sidesof the source and drain electrodes 302 as shown in FIG. 8. Optionally,these portions 804 (and underlying portions of the dielectric layer 402)can be removed, if desired, using standard lithography and etchingtechniques. See FIG. 9. For instance, the removal of the outer portionof the metal (portions 804) and the underlying dielectric is fullydependent on the specific application of the devices, e.g., if thedevices are to be used in an integrated circuit and to be connected in amulti-level device architecture, this removal might not be necessarysince the next layer will cover all of these outer portions. However, ifonly one layer of devices exist in the circuits, the device here mighthave to be connected to others through interconnects on this same level,and the outer portion of the metal 804 then will have to be removed.This removal process could be done by a photoresist patterning and metalwet etching process.

An alternative process flow is now provided that is similar to theprocess flow of FIGS. 1-9, except that the photoresist is deposited anddeveloped before the dielectric and gate are formed. This alternativeprocess flow is now described by way of reference to FIGS. 10-14. Thebeginning steps are the same as those described in conjunction with thedescription of FIGS. 1-3, above. Thus, description of the process willbegin with the structure shown in FIG. 3.

Proceeding from FIG. 3 to FIG. 10, a positive photoresist 1002 isblanket deposited on the channel material and the source and drainelectrodes 302. See FIG. 10. Photoresist 1002 may be deposited in thismanner using a spin-on deposition process. Any conventional photoresistmaterial may be employed. Next, as indicated by arrows 1004, thephotoresist 1002 is then exposed (using UV light) through thetransparent substrate 202, i.e., from the backside of the structure.

As highlighted above, typical UV lasers used in lithography systemsinclude the Krypton fluoride laser at 248-nm wavelength and the argonfluoride laser at 193-nm wavelength. The exposure duration depends onthe specific photoresist being employed, with a typical exposureduration being from about 5 seconds to about 60 seconds. The “developed”portions of the photoresist can then be easily removed using a developersolution, e.g., TMAH, selective to the unexposed or undeveloped portionsof the photoresist. Advantageously, with the present fabrication flow,since the exposure is being done from a backside of the structure,through the transparent substrate, certain portions of the photoresist1002 are blocked from exposure to the UV light by the source and drainelectrodes 302. These portions of the photoresist blocked by the sourceand drain electrodes 302 (these portions are shown as portions 1102 inFIG. 11, described below) are self-aligned to an area over the channelmaterial in which the gate will be formed.

Further, in contrast to the first process flow presented above, in thiscase, the gate dielectric has not yet been deposited. Thus, the UV lightdoes not have an extra layer (i.e., the dielectric layer) to penetrateduring the exposure step and the dielectric layer (formed later in theprocess, see below) can be made thicker if so desired.

As shown in FIG. 11, once the developed portions of the photoresist areremoved (as described above), i.e., the photoresist is patterned, theremaining portions 1102 of the photoresist remain over the source anddrain electrodes 302. These portions 1102 of the photoresist will maskthe source and drain electrodes 302 during gate metal deposition and canbe used (as described below) to lift-off the excess gate metal andunderlying dielectric.

As shown in FIG. 12, a dielectric layer 1202 is deposited onto thestructure coating the exposed surfaces of the channel material, theportions 1102 of the photoresist, the transparent substrate 202 and thesource and drains electrodes 302. The dielectric layer 1202 will serveas a gate dielectric of the device, separating a gate of the transistor(to be formed as described below) from a channel of the transistor.Suitable dielectric materials and deposition processes were describedabove. By contrast with the first process flow, in this case, since thephotoresist has already been developed, the dielectric layer 1202 can bethicker than dielectric layer 402 (see above), if so desired. By way ofexample only, dielectric layer 1202 is formed having a thickness of fromabout 1 nm to about 100 nm, e.g., about 50 nm.

As shown in FIG. 13, a gate metal(s) 1302 is blanket deposited onto thedielectric layer 1202. Suitable gate metals, configurations (e.g., amulti-layer stack) and deposition processes were described above.

A lift-off process is then used to remove the portions 1102 of thephotoresist and with them portions of the overlying dielectric layer1202 and metal layer 1302. See FIG. 14. Exemplary lift-off parameterswere provided above. The result is gate 1402 (labeled “G”).Advantageously, since the photoresist portions 1102 (now removed) werealigned with the source and drain electrodes 302, portions of the gatemetal 1302 over the source and drain electrodes 302 were also removed bythe above-described lift-off process. Accordingly, the portion of metallayer 1302 that is gate 1402 is self-aligned with the source and drainelectrodes 302. See FIG. 14.

As is apparent from the above-described process flow and associatedfigures, the source and drain electrodes 302 of the transistor deviceare interconnected by the channel material (which serves as a channel ofthe transistor device). The gate 1402, which is separated from thechannel by the dielectric layer 1202, will serve to regulate electronflow through the channel.

Portions 1404 of the metal layer 1302 will also remain to the outersides of the source and drain electrodes 302 as shown in FIG. 14.Optionally, these portions 1404 (and underlying portions of thedielectric layer 1202) can be removed, if desired, using standardlithography and etching techniques. See FIG. 15. For instance, theremoval of the outer portion of the metal (portions 1404) and theunderlying dielectric is fully dependent on the specific application ofthe devices, e.g., if the devices are to be used in an integratedcircuit and to be connected in a multi-level device architecture, thisremoval might not be necessary since the next layer will cover all ofthese outer portions. However, if only one layer of devices exist in thecircuits, the device here might have to be connected to others throughinterconnects on this same level, and the outer portion of the metal1404 then will have to be removed. This removal process could be done bya photoresist patterning and metal wet etching process.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A method of fabricating a transistor device,comprising the steps of: providing a transparent substrate; forming achannel material on the substrate; forming source and drain electrodesover, and in contact with, the channel material; depositing aphotoresist on the channel material and on the source and drainelectrodes; developing the photoresist using UV light exposure throughthe transparent substrate, wherein exposure of portions of thephotoresist is blocked by the source and drain electrodes; removingdeveloped portions of the photoresist exposing portions of the channelmaterial, wherein undeveloped portions of the photoresist remain overthe source and drain electrodes; depositing a dielectric layer on thechannel material and on the undeveloped portions of the photoresist to athickness of from about 1 nm to about 100 nm, wherein the dielectriclayer is deposited after the photoresist has been developed through thesubstrate and after the developed portions of the photoresist have beenremoved; depositing at least one gate metal on the dielectric layer; andremoving the undeveloped portions of the photoresist along with portionsof the gate metal and portions of the dielectric layer over the sourceand drain regions, wherein a remaining portion of the gate metal betweenthe source and drain region electrodes forms a gate of the device on thedielectric layer over the channel material which is self-aligned to thesource and drain electrodes.
 2. The method of claim 1, wherein thetransparent substrate comprises a glass substrate, a flexible plasticsubstrate or a silicon carbide wafer.
 3. The method of claim 1, whereinthe channel material comprises a carbon-based material.
 4. The method ofclaim 3, wherein the carbon-based material comprises graphene or carbonnanotubes.
 5. The method of claim 1, wherein the channel materialcomprises a nanostructured material selected from the group consistingof nanowires, nanorods, nanocolumns and quantum dots.